Localized fin width scaling using a hydrogen anneal

ABSTRACT

Transistors including one or more semiconductor fins formed on a substrate. The one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners. There is a gate stack on the channel region of the one or more semiconductor fins.

BACKGROUND

Technical Field

The present invention relates to transistor fabrication and, moreparticularly, to the fabrication of transistors with thinned channelfins.

Description of the Related Art

Limits on length of gates in fin field effect transistors (FinFETs) areimposed by fin width. As the gate length decreases, short channelcurrent leakage increases. Because new technologies are capable offorming progressively smaller transistors, these short channel effectsbecome significant challenges in transistor design. Forming transistorswith thinner fins helps enhance gate control over the transistorchannel, thereby reducing current leakage.

However, uniformly decreasing the size of fins presents its ownchallenges. When the width of a fin is reduced, current crowding at thefin's exterior increases. This increases the effective resistance of thethinner fin, which impacts the drive current performance of the FinFET.This compromises the benefits to the subthreshold leakage controlprovided by having a thinner fin.

Existing processes for thinning fins include oxidation. However, suchthinning processes may undercut spacers around the channel region,resulting in physical faults or defects in the resulting transistors. Assuch, existing oxidation processes are inadequate for producingsmall-scale devices.

SUMMARY

A transistor includes one or more semiconductor fins formed on asubstrate. The one or more semiconductor fins are thinner in a channelregion than in source and drain regions and have rounded corners. Thereis a gate stack on the channel region of the one or more semiconductorfins.

A transistor includes one or more semiconductor fins formed on asubstrate. The one or more semiconductor fins are thinner in a channelregion than in source and drain regions and have rounded corners. Thereis a gate dielectric layer on the channel region of the one or moresemiconductor fins. There is a gate structure on the gate dielectriclayer.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a step in forming a locally thinnedchannel FinFET in accordance with the present principles;

FIG. 2 is a top-down view of a step in forming a locally thinned channelFinFET in accordance with the present principles;

FIG. 3 is a cross-sectional view of a step in forming a locally thinnedchannel FinFET in accordance with the present principles;

FIG. 4 is a top-down view of a step in forming a locally thinned channelFinFET in accordance with the present principles;

FIG. 5 is a cross-sectional view of a step in forming a locally thinnedchannel FinFET in accordance with the present principles;

FIG. 6 is a block/flow diagram of a method of forming a locally thinnedchannel FinFET in accordance;

FIG. 7 is a cross-sectional view of fins before and after annealing inaccordance with the present principles;

FIG. 8 is a top-down view of fins before and after annealing inaccordance with the present principles;

FIG. 9 is a cross-sectional view of a step in forming a locally thinnedchannel FinFET in accordance with the present principles;

FIG. 10 is a cross-sectional view of a step in forming a locally thinnedchannel FinFET in accordance with the present principles; and

FIG. 11 is a cross-sectional view of a step in forming a locally thinnedchannel FinFET in accordance with the present principles.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present principles provide fin field effect transistors (FinFETs)that have fins with reduced width localized to the channel region. Shortchannel effects in transistors can be controlled if W_(fin)<0.7L_(gate), where W_(fin) is the width of the fin and L_(gate) is thelength of the gate. Current crowding is a further concern, becausereducing the fin width in the area of the source and drain region cancause a nonhomogeneous distribution of current density, which can leadto an increased effective resistance and shortened device lifetime.

To keep fin widths low and allow for further reduction in gate length,the present principles apply a hydrogen anneal that removes materialonly from the channel region of the fins, preserving the width of thefins in the source/drain region. In this way, leakage current in thetransistor's off state is reduced without increasing the exteriorresistance of the fins in the source and drain regions. The fins areepitaxially grown in the source/drain regions to bring them intocontact. The thinning provided by the present principles is compatiblewith standard replacement gate FinFET process flows, with no additionalmaskset being needed.

It is to be understood that the present invention will be described interms of a given illustrative architecture having a wafer; however,other architectures, structures, substrate materials and processfeatures and steps may be varied within the scope of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

A design for an integrated circuit chip of photovoltaic device may becreated in a graphical computer programming language, and stored in acomputer storage medium (such as a disk, tape, physical hard drive, orvirtual hard drive such as in a storage access network). If the designerdoes not fabricate chips or the photolithographic masks used tofabricate chips, the designer may transmit the resulting design byphysical means (e.g., by providing a copy of the storage medium storingthe design) or electronically (e.g., through the Internet) to suchentities, directly or indirectly. The stored design is then convertedinto the appropriate format (e.g., GDSII) for the fabrication ofphotolithographic masks, which typically include multiple copies of thechip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a step in forming a locallythinned channel FinFET is shown. This view shows a cut-away perspectivealong fins 104. Fins 104 are formed on a substrate 102. The substrate102 may be formed from a bulk semiconductor, such as silicon orgermanium. The substrate 102 may also be formed from alternativesemiconductor materials such as a silicon-germanium composite, siliconcarbide, or a III-V composite semiconductor such as gallium arsenide orindium arsenide. The substrate 102 may be a semiconductor on insulatorsubstrate, where a semiconductor layer is formed on top of a dielectricmaterial such as, e.g., silicon dioxide. In the present embodiments, asemiconductor-on-insulator structure is shown, with a buried oxide layer102 supporting semiconductor fins 104. A top dielectric layer 106 isformed over the fins 104 and may include, e.g., silicon dioxide or anyother appropriate insulating material. The top dielectric layer 106 is,e.g., a flowable oxide layer that serves to protect the fins 104 duringa gate replacement process.

The fins 104 may be formed from any appropriate fabrication process. Inparticular, it is contemplated that the fins 104 may be etched from alayer of semiconductor using a lithographic or reverse ion etchingprocess. Those having ordinary skill in the art will be able to selectan appropriate mask and etch according to the particular materials used.

Spacers 110 separate a region of fins 104 that will form the channel.The spacers 110 may be formed from an appropriate hardmask material suchas, e.g., silicon nitride. A dummy gate structure 108 is formed over thefins 104 in the channel region to protect them to this stage and may beformed from any appropriate material including, e.g., polysilicon.

Referring now to FIG. 2, a step in forming a locally thinned channelFinFET is shown. This view shows a top-down perspective on the fins 104with the top dielectric layer 106 removed for the sake of illustration.The fins 104 are epitaxially grown to form bridging connections 202,thereby merging the fins 104 in the source/drain region. The epitaxialgrowth causes each fin 104 to expand from its sides until the fins 104come into contact.

Referring now to FIG. 3, a step in forming a locally thinned channelFinFET is shown. The dummy gate 108 is removed using, e.g., a wet etchor polysilicon chemical mechanical polish, exposing the channel region302 of the fins 104. If the fins 104 had caps, those caps may be removedusing any appropriate process including, e.g., a chemical oxide removalprocess. The top dielectric layer 106 remains over the fins 104 in thesource/drain regions, protecting these portions of the fins 104. At thispoint, an anneal may be performed that thins the fins 104 only in thechannel region 302. The anneal may be performed using, e.g., hydrogen(H₂) in a high-temperature, low-pressure environment. The anneal causesfin material in the channel region 302 to be removed. In an embodimentwhere the fins 104 are formed from silicon and a hydrogen anneal isused, the chemical reaction is either Si+H₂→SiH₂ or Si+2H₂→SiH₄. Thehydrogen anneal produces superior results to fin thinning produced by,e.g., oxidation processes, which would undercut the spacers 110 andseparate them from the substrate 102. It should be recognized that thisanneal will also work on non-silicon semiconductor materials such asgermanium or III-V composite semiconductors.

In an exemplary anneal, hydrogen gas is applied at a temperature ofabout 800 degrees Celsius at a pressure of 10 Torr for 300 seconds. Aswill be described in greater detail below, the quality of a given set ofanneal parameters may be quantified as the line edge roughness (LER) ofthe fins 104 in the channel region 302. Fins 104 in a realisticembodiment will not be truly straight—the anneal helps to smoothe thefins 104 and decrease LER. Anneals performed at temperatures that aretoo high (e.g., 850 degrees Celsius) cause too much reflow in thematerial of the fins 104 and may cause the LER to increase again.

It should be noted that an anneal under these conditions may causelonger fins to migrate. When fins 104 migrate, the fins 104 mayphysically break away from their place on substrate 102 and merge with aneighboring fin 104. This concern is less prominent in the presentembodiments due to the short length of the fins of the channel region302.

Referring now to FIG. 4, a step in forming a locally thinned channelFinFET is shown. Again, the top dielectric layer 106 is not shown inthis top-down view to illustrate the thinning of the fins 104. Inparticular, the anneal removes material only from the fins in thechannel region, producing thinned channel fins 402, without theepitaxially grown semiconductor material 202 to connect them. The fins402 may be thinned to about 10 nm to about 8 nm. Thinning to smallerwidths than this can impede functionality, as the threshold voltage of atransistor will increase due to quantum effects and carrier mobilitypenalties when the fins 402 are about 5 nm thick.

Referring now to FIG. 5, a step in forming a locally thinned channelFinFET is shown. A dielectric layer 504 is deposited in the channelregion 302 conforming to the contours of thinned fins 402. Thedielectric layer 504 may be formed from any appropriate dielectricmaterial including, e.g., a high-k dielectric such as hafnium dioxide,hafnium silicate, zirconium dioxide, or zirconium silicate. Thedielectric layer 504 may be formed using any appropriate depositionprocess such as, e.g., chemical vapor deposition (CVD), atomic layerdeposition (ALD), or physical vapor deposition (PVD). A gate 502 isformed over the dielectric layer 504. It is specifically contemplatedthat the gate 502 may be a metal gate formed from, e.g., tantalum,tantalum nitride, niobium, etc.

Referring now to FIG. 6, a method for forming a locally thinned channelFinFET is shown. As shown above, a standard FinFET process may be usedto produce fins in block 602, where the source/drain regions of the fins104 are protected by a top dielectric layer 106 and the channel region302 of the fins 104 is covered by a dummy gate 108. Block 604 removesthe dummy gate 108 to uncover the channel region 302 of the fins 104.

As described above, block 606 performs an anneal using, e.g., hydrogengas, to remove material from the fins 104 in the channel region 302. Itis specifically contemplated that the anneal may be performed at 800degrees Celsius and a pressure of 10 Torr. Those having ordinary skillin the art will be able to select an appropriate duration for the annealaccording to the size and thickness of the fins 104. After the anneal,thinned fins 402 are covered by a gate stack in block 608 by applying adielectric layer 504 and a gate material 502.

The present principles enhance the shape of the fins 104 in multipleways. The hydrogen anneal described above improves uniformity in theprofile of the fins 104 and also improves the morphology along thedirection of the fins 104, described above as the LER.

Referring now to FIG. 7, a cross-section of two fins is shown, pre- andpost-anneal. A first fin, 702, shows an exemplary fin before anneal,where the chemical etch that produced the fin 702 left irregularities inthe fin profile. The anneal reduces the irregularities, producing animproved fin profile 704. The anneal also reduces the overall fin widthin proportion to the anneal's duration. Suboptimal fin profiles lead toincreased irregularities along the sides of the fins. In particular, itshould be noted that the anneal has removed the concavities of the finprofile in 702, such that the resulting fin profile is entirely convex.

In one experimental trial, initial fin width was measured at the top,middle, and bottom with widths of 9.231 nm, 8.951 nm, and 10.91 mrespectively, at a height of 27.97 nm and having relatively sharpcorners. As shown in fin 702, the top and bottom measurements weregreater than the middle width, producing a concave cross-section, whichis not optimal. After annealing, the fin had measurements of 6.373 nm,6.918 nm, and 7.397 nm respectively, with a height of 26.8 nm androunded corners. In addition to an overall reduction in width, thisproduces the superior profile shown as fin 704 with better electricalproperties than the original fin 702. Notably, this profile is mosteffectively formed in a low-pressure environment.

Experiments with high-pressure environments have resulted in a finprofile that bulges in the middle, with a middle width greater than thewidth of the top and bottom. In one exemplary test, a pressure of 600Torr was used, resulting in widths of 7.84 nm, 8.64 nm, and 8.25 nmrespectively. Similarly, anneals at temperatures higher than about thosediscussed above (e.g., at 850 degrees Celsius) result in similar bulgesin the middle width measurement post-anneal.

Referring now to FIG. 8, a top-down view of two fins is shown, pre- andpost-anneal. A first fin 802 shows an exemplary fin before anneal, wherethe formation of the fin 802 produced surface irregularities. Theirregularities are shown here as “wavy” sides and may be quantified by ameasure of the LER, where LER may be defined as the root-mean-squared ofthe fin's edge. After the anneal, the thinned fins 804 exhibit decreasedLER because convex portions of the fins 802 are preferentially etched inthe anneal. Rough surfaces may impede carrier transport and therebyincrease the resistance of the channel fins 402.

Referring now to FIG. 9, an alternative embodiment of a step in forminga locally thinned channel FinFET is shown. In this embodiment, an oxidecapping layer 902 is left on the fins 104. The presence of a cappinglayer 902 may help prevent damage to the fins 104 during the anneal. Thehydrogen anneal may be performed with the oxide cap 902 remaining on thefins 104, such that the oxide cap 902 is etched and thinned along withthe fins in the channel region 302.

Referring now to FIG. 10, an optional step in forming a locally thinnedchannel FinFET is shown. After the removal of dummy gate 108, thesubstrate layer 102 may be etched to expose the underside of the channelregion 302 of the fins 104 and form undercut gap 1002. This allows theformation of nanowires from the fins 104 by rounding the rough edgesafter the hydrogen anneal. The etch of the fins 104 into nanowires maybe performed by any appropriate process including, e.g., a wet etch thatpreferentially etches and softens the corners of the fins 104.

Referring now to FIG. 11, an optional step in forming a locally thinnedchannel FinFET is shown. After removal of the dummy gate 108, additionalliner material is deposited and etched from the channel region 302 toincrease the width of spacers 1102. The additional liner material shouldmatch the material of spacers 110 and thus may be, for example, formedfrom silicon nitride.

Increasing the width of spacers 1102 helps provide additional protectionfor fins 104 in the source and drain regions by preventing hydrogen gasfrom seeping inward during the anneal process. Allowing the hydrogen toetch into the source and drain regions could result in thinning of thefins 104 in these regions and cause dopant loss. The loss of dopant inthese regions would mean a higher resistance and decreased functionalityfor the finished device.

Having described preferred embodiments of localized fin width scalingusing a hydrogen anneal (which are intended to be illustrative and notlimiting), it is noted that modifications and variations can be made bypersons skilled in the art in light of the above teachings. It istherefore to be understood that changes may be made in the particularembodiments disclosed which are within the scope of the invention asoutlined by the appended claims. Having thus described aspects of theinvention, with the details and particularity required by the patentlaws, what is claimed and desired protected by Letters Patent is setforth in the appended claims.

What is claimed is:
 1. A transistor, comprising: at least onesemiconductor fin formed on a substrate, wherein a profile of the atleast one semiconductor fin is entirely convex and is widest at thebottom and tapers toward the top, and wherein the at least onesemiconductor fin is thinner in a channel region than in source anddrain regions and has rounded corners; and a gate stack on the channelregion of the at least one semiconductor fin.
 2. The transistor of claim1, further comprising a spacer over the at least one semiconductor fin,separating the channel region from a respective source or drain region.3. The transistor of claim 2, wherein the spacer contacts the substratewithout undercut.
 4. The transistor of claim 2, further comprising ashielding spacer layer that thickens the spacer to protect the sourceand drain regions of the at least one semiconductor fin from etching. 5.The transistor of claim 1, wherein a plurality of semiconductor fins aremerged in the source and drain regions with epitaxially grown additionalfin material that connects original material of the plurality ofsemiconductor fins.
 6. The transistor of claim 1, wherein the at leastone semiconductor fin is hydrogen-annealed at about 800 degrees Celsiusand at a pressure of about 10 Torr.
 7. The transistor of claim 1,wherein there is an undercut gap between the at least one semiconductorfin and the substrate and wherein the at least one semiconductor fin isrounded to form nanowires.
 8. The transistor of claim 1, furthercomprising an oxide capping layer on the at least one semiconductor fin.9. A transistor, comprising: at least one semiconductor fin formed on asubstrate, wherein a profile of the at least one semiconductor fin isentirely convex and is widest at the bottom and tapers toward the top,and wherein the at least one semiconductor fin is thinner in a channelregion than in source and drain regions and has rounded corners; a gatedielectric layer on the channel region of the at least one semiconductorfin; and a gate structure on the gate dielectric layer.
 10. Thetransistor of claim 9, further comprising a spacer over the at least onesemiconductor fin separating the channel region from a respective sourceor drain region.
 11. The transistor of claim 10, wherein the spacercontacts the substrate without undercut.
 12. The transistor of claim 10,further comprising a shielding spacer layer that thickens the spacer toprotect the source and drain regions of the at least one semiconductorfin from etching.
 13. The transistor of claim 9, wherein a plurality ofsemiconductor fins are merged in the source and drain regions withepitaxially grown additional fin material that connects originalmaterial of the plurality of semiconductor fins.
 14. The transistor ofclaim 9, wherein the at least one semiconductor fin is hydrogen-annealedat about 800 degrees Celsius and at a pressure of about 10 Torr.
 15. Thetransistor of claim 9, wherein there is an undercut gap between the atleast one semiconductor fin and the substrate and wherein the at leastone semiconductor fin is rounded to form nanowires.
 16. The transistorof claim 9, further comprising an oxide capping layer on the at leastone semiconductor fin.
 17. A transistor, comprising: at least onesemiconductor fin formed on a substrate, wherein the at least onesemiconductor fin is thinner in a channel region than in source anddrain regions and have rounded corners; an oxide capping layer on the atleast one semiconductor fin; a gate dielectric layer on the channelregion of the at least one semiconductor fin; and a gate structure onthe gate dielectric layer.